For amorphous cobalt-silicon and bias-induced cobalt-silicon films, Co 2 Si forms as a firstsilicide phase, followed by the formation of CoSi and CoSi 2. For a Co/a-Si multilayer film with the atomic concentration ratio of the cobalt to silicon layer being 1:2, CoSi is found to be formed as the first silicide phase.
A novel electroactive material for ascorbic acid (AA) determination was successfully prepared by plating/potential cycling method. The cobalt film was first deposited on the surface of glassy carbon electrode (GCE) in CoSO 4 solution by potential cycling, and then a cobalt film on the surface of GCE was activated by potential cycling …
On thin cobalt films formed by deposition of the vapour at 77 °K, the dependency of electrical resistance R on thickness dand annealing temperature T T has been studied. The dependence of R on thickness d, for films between 43–1020 Å, can be described in terms of Fuchs-Sondheimer theory when a perfectly diffuse electron …
The reason for this is probably that the electrocatalytical activity of the cobalt hydroxide film electrode has been controlled mainly by the transfers resistance of cobalt hydroxide film, while Co(II) ion concentration is in the range of 0.8 × 10 −3 to 1.6 × 10 −3 mol/L, the maximum of the electrocatalytical activity of the film ...
Section snippets Materials and film preparation. Cobalt chloride hexahydrate (Sigma–Aldrich) is taken as a precursor material to prepare Co 3 O 4 films which is dissolved in deionized water and stirred for 20 min with magnetic stirrer to get clear and homogeneous solution. Then, 5 ml of the prepared solution with different molar …
of cobalt amount concentration in precursor solution on the structural, optical and electrical properties of Co 3 O 4 ... film deposited with the higher concentration of 0.2 mol/l
MOCVD cobalt films were deposited on a Si substrate at deposition temperatures from 50 to 200 °C.The growth rate of the Co films is shown in Fig. 1 and increased to 140. °C and then decreased above 140 °C.. The maximum growth rate was about 30 nm/min at a deposition temperature of 140 °C.The activation energy of the Co …
The almost constant cobalt concentration profiles in Fig. 2 point to stoichiometric silicide formation. The interdiffused atoms across the interface do actually form a compound, as shown by XRD patterns in Fig. 3 a. The spectrum of as deposited film shows two reflexes corresponding to Co as well as a very intense peak centered at 2θ ≈ …
The Co film thickness was 45 nm. Fig.2 Thermal grooving of Co silicide films during formation at 600'C on pre-amorphized Si, (a) after 1 second, (b) after 100 sec. The initial …
Deposition, oxidation, and wetting of cobalt films on Au(111) Co2p XP spectra from a 1 MLE Co film on Au(111) before and after oxidation are shown in Fig. 1a.The bottom spectrum (black trace ...
Co thin films masked with SiO 2 /Si 3 N 4 layers were etched using a high-density plasma of a CH 3 COCH 3 /Ar gas mixture. As the concentration of CH 3 COCH 3 increased, the etch rate of the Co thin films and etch selectivity decreased. Optimal etch profiles of the Co films without redeposition were achieved owing to the formation of Co …
All the etched cobalt films were cleaned using an HCl solution. At a Cl 2 concentration exceeding 40 %, poor etch profiles were obtained owing to the low etch …
Another issue in Co electrodeposition is the severe hydrogen evolution side reaction (HER). Since the equilibrium reduction potential of cobalt metal is more …
To reduce the resistivity of interconnects, to enhance electro-migration lifetime, and to improve the step coverage of the barrier layer, we deposited cobalt and cobalt–tungsten alloy films by chemical vapor deposition (CVD) using octacarbonyl dicobalt [Co 2 (CO) 8] and hexacarbonyl tungsten [W(CO) 6] as precursors, …
Thin films of Co 3 S 4 have been prepared by the chemical-bath deposition process using cobalt(II) chloride and thiourea as the starting materials and NH 3 (aq) as the complexing agent. Energy-dispersive X-ray fluorescence analysis indicates values of the Co/S atomic ratio different from the ideal value of 0.75.
pH= 6 shows the release of stress in the film and confirms the development of good crystallinity in the films. 3.2 Optical analysis Fig. 3. Transmittance spectra of Co 3 O 4 films with different solution pH. The optical properties of the cobalt oxide thin films are analysed by UV-Vis-NIR spectrometer. The transmission spectra of Co 3 O 4
Abstract. Cobalt recovery from low-grade mafic and ultramafic ores could be economically viable if combined with CO 2 storage under low-water conditions, but the impact of Co on metal silicate carbonation and the fate of Co during the carbonation reaction must be understood. In this study, in situ infrared spectroscopy was used to …
In this study, Co thin films were etched using a C 2 H 5 OH/O 2 /Ar gas mixture via high-density plasma etching. As the concentrations of C 2 H 5 OH and O 2 gases increased, the etch rate of the Co films decreased, whereas the etch profile improved. The addition of O 2 to C 2 H 5 OH/Ar led to reduced redeposition on the …
The effect of cobalt acetate concentration in the precursor solution on the performance of these multilayer coatings was studied. Solar absorptances as high as 0.93–0.94 and thermal emittances as low as 0.09 were obtained for films deposited with lower concentrations. ... Thin films of cobalt oxide have been deposited by spray …
Film emulations for Capture One Tailored emulation pack made specifically for a single camera model on Capture One. Elite Portra; Elite Kodak; Elite Fuji Pos. Elite Fuji Neg. Elite Classic B&W; ... COBALT D65 ISO 17321: 79. More is better. To evaluate your camera's colour accuracy, you'll find countless reviews using the basic 24-patch ...
Cobalt oxide sensing film was in situ prepared on glassy carbon electrode surface via constant potential oxidation. Controlling at 0.8 V in NaOH solution, the high-valence cobalt catalytically oxidized the reduced compounds, decreasing its surface amount and current signal.The current decline was used as the response signal of …
An opto-electrochemical phosphate-ion sensor was developed with a cobalt oxide thin-film electrode. The cobalt oxide (Co 3 O 4) thin-film electrode showed a remarkable change of transmittance at 550–800 nm, under application of an anodic potential at 0.4 V vs. SCE, which was dependent on HPO 4 2− concentration. The …
The effect of H 2 O 2 concentration on DRs and RRs of cobalt films was investigated across the pH range of 4–12. 3 wt% of silica loading was used in the slurries so that the RRs of CVD cobalt films used in this study could be compared to those obtained with PVD cobalt films in a previous study. 19 Three different H 2 O 2 concentrations …
The electrochemical formation of cobalt(II) hexacyanoferrate films at glassy carbon electrode in various concentrations of NaNO 3, pH 5.0 acetate buffer solution was performed by repetitive cyclic voltammetry. Fig. 1 shows different cyclic voltammograms for film deposition prepared using 0.1, 0.4 and 1.0 M NaNO 3 as supporting electrolyte. A …
At neutral pH (Figure 3 a), the Pd-Co/UOx catalyst exhibits a higher current density per UA concentration value in a linear range of 0 ... A glassy carbon electrode modified with a film composed of cobalt oxide nanoparticles and graphene for electrochemical sensing of H2O2. Microchimica Acta, 181 (2014), ...
Inductively coupled plasma (ICP) reaction ion etching of Co thin films patterned with SiO 2 hard marks was performed using Cl 2 /Ar and Cl 2 /O 2 /Ar gas mixtures. The etch rate, etch selectivity, and etch profile of the cobalt thin films were investigated by varying the gas concentration in the Cl 2 /Ar and Cl 2 /O 2 /Ar gas …
ZnO thin film was doped with cobalt (Co) at concentration of 0.02 M, 0.08 M and 0.14 M. The deposition temperature of 400 °C with precursor flow rate of 3 ml / min at the substrate to nozzle distance of 15 cm was used for spray pyrolysis technique. The structural property, measured by X-ray diffractometer (XRD), of the film showed seven …
Thin Solid Films, 24 (1974) 349-353 Elsevier Sequoia S.A., Lausanne-Printed in Switzerland 349 ELECTRODEPOSITED SINGLE-CRYSTAL COBALT FILMS* J. E. FISHER AND R. L. WILKINSON National Research Council of Canada, Ottawa (Canada) (Received January 22, 1974; accepted July 15, 1974) Electrodeposition of single-crystal …
Inductively coupled plasma reaction ion etching (ICP-RIE) of cobalt thin films patterned with SiO 2 hard masks was performed using Cl 2 /O 2 /Ar gas mixture.
An increasing level of research and development (R&D) activity is now focused on cobalt thin and ultrathin film structures, which have found myriad new applications across a variety of industrial sectors. 1,2 This attraction to cobalt is driven …
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